Enhanced Thermoelectric Properties of Sb2Te3 Thin Films by In Doping

Flexible Sb2Te3-based thermoelectric (TE) materials are promising candidates for fabricating energy devices that power wearable electronics and sensors. Enhancing the TE properties of Sb2Te3 thin films represents a significant scientific investigation. In this work, a thermal diffusion method is app...

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Bibliographic Details
Published in:Coatings (Basel) 2023-10, Vol.13 (10), p.1784
Main Authors: Wei, Meng, Zhong, Yiming, Zhao, Gaiqing, Fan, Ping, Ao, Dongwei, Zheng, Zhuanghao, Chen, Yuexing
Format: Article
Language:English
Subjects:
Doping
Electrical resistivity
Grain size
Heat conductivity
Molecular beam epitaxy
Morphology
Power factor
Room temperature
Scanning electron microscopy
Screen printing
Seebeck effect
Spectrum analysis
Thermal conductivity
Thermal diffusion
Thermoelectric materials
Thin films
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Summary:Flexible Sb2Te3-based thermoelectric (TE) materials are promising candidates for fabricating energy devices that power wearable electronics and sensors. Enhancing the TE properties of Sb2Te3 thin films represents a significant scientific investigation. In this work, a thermal diffusion method is applied to prepare the In-doped Sb2Te3 thin film. In doping can lead to a high Seebeck coefficient of ~137.04 μV K−1 as well as moderate electrical conductivity. As a result, the high power factor of ~18.22 μW cm−1 K−2 at 303 K is achieved. Moreover, In doping could reduce the thermal conductivity owing to the increase in phonon scattering. Finally, the high ZT values of ~0.47 at room temperature (303 K) and ~0.6 at 453 K are obtained. This indicates that In doping is a highly promising and effective approach to improving the TE performance of Sb2Te3 thin films.
ISSN:2079-6412
2079-6412
DOI:10.3390/coatings13101784