Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

Color centers in the O-band (1260-1360 nm) are critical for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been explored in silicon hosts as spin-photon interfaces. This study explores and compares...

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Bibliographic Details
Published in:arXiv.org 2024-12
Main Authors: Murat Can Sarihan, Huang, Jiahui, Jin Ho Kang, Fan, Cody, Liu, Wei, Azizur-Rahman, Khalifa M, Liang, Baolai, Chee Wei Wong
Format: Article
Language:English
Subjects:
Color centers
Photoluminescence
Quantum entanglement
Qubits (quantum computing)
Transition metals
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Summary:Color centers in the O-band (1260-1360 nm) are critical for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band defects in silicon: T centers and \(^*\)Cu (transition metal) color centers. During T center formation, we observed the formation and dissolution of various defects, including the copper-silver-related defect with a doublet line around 1312 nm (\(^*\)Cu\(^{0}_{n}\)), near the optical fiber zero dispersion wavelength. We then investigate the photophysics of both T and \(^*\)Cu centers, focusing on their emission spectra and spin properties to assess their potential for high-fidelity spin-photon interfaces. Additionally, we report a 25\% broadening of the \(^*\)Cu\(^{0}_{0}\) line under a 0.5 T magnetic field, potentially linked to spin degeneracy, suggesting that this defect may provide a promising alternative to T centers for spin-photon interfaces.
ISSN:2331-8422