Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique

Negative Bias Temperature Instability (NBTI) on p-type Metal Oxide Semiconductor Field Effect Transistors (pMOSFET) has been experienced with developed fast measurement technique and analyzed through V TH degradation (Δ V TH ). The results have revealed a dependence of power exponent ( n ) and activ...

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Bibliographic Details
Published in:Russian microelectronics 2023-10, Vol.52 (5), p.429-438
Main Authors: Abdelmadjid Benabdelmoumene, Djezzar, Boualem, Messaoud, Dhiaelhak, Boubaaya, Mohamed, Chenouf, Amel, Zatout, Boumediene
Format: Article
Language:English
Subjects:
Activation energy
Degradation
Electric fields
Electrical Engineering
Engineering
Field effect transistors
Hole traps
Leakage current
Metal oxide semiconductors
MOSFETs
P-type semiconductors
Semiconductor devices
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Summary:Negative Bias Temperature Instability (NBTI) on p-type Metal Oxide Semiconductor Field Effect Transistors (pMOSFET) has been experienced with developed fast measurement technique and analyzed through V TH degradation (Δ V TH ). The results have revealed a dependence of power exponent ( n ) and activation energy ( E a ) on stress electric field ( E OX ), indicating the existence of several phases of degradation. In fact, an electric field of 7.0 MV/cm delimiting NBTI and Stress Induced Leakage Current (SILC) is well demonstrated. Moreover, for NBTI stress, first the dependence of exponent n and activation energy E a tendencies on E OX has been interpreted by hole trap contribution, which saturates at early stage of stress. Then, changes of n and E a with E OX have been explained by the domination of N IT or N OT amount and by their rate generation.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739723700646