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A stress relaxation strategy for preparing high-quality organic–inorganic perovskite thin films via a vapor–solid reaction
Perovskite solar cells (PSCs) prepared through vapor–solid reactions exhibit promising potential for commercial application due to their scalability and lack of organic solvents. Unlike solution-based drying processes, the vapor–solid reaction causes the perovskite thin film to undergo volume expans...
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Published in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023-11, Vol.11 (43), p.23387-23396 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Perovskite solar cells (PSCs) prepared through vapor–solid reactions exhibit promising potential for commercial application due to their scalability and lack of organic solvents. Unlike solution-based drying processes, the vapor–solid reaction causes the perovskite thin film to undergo volume expansion rather than shrinkage. Consequently, the residual stress within the vapor-processed perovskite thin film differs significantly from that within the solution-processed film. In this study, we investigate the characteristics of residual stress in films obtained
via
vapor–solid reactions. Building upon this, we develop a vapor-annealing strategy to alleviate the residual stress. Through post-treatment of the film with organic ammonium salt vapor, we successfully obtained high-quality perovskite thin films devoid of residual stress. As a result, the optimized PSCs achieve an impressive champion power conversion efficiency (PCE) of 22.06%. Furthermore, the unencapsulated device maintains 97% of its initial PCE after 3600 h storage under ambient conditions, and the encapsulated device 84% of its initial PCE after a 720 h thermal test at 85 °C. These results underscore the significance of eliminating residual stress in ensuring the long-term stability of high-efficiency PSCs. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/D3TA04666D |