Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity

• Published in: Applied physics letters 2023-11, Vol.123 (20)
• Main Authors: Yao, Yixin, Zhang, Yachao, Zhu, Jiaduo, Dang, Kui, Su, Chunxu, Ma, Jinbang, Chen, Kai, Wang, Baiqi, Liu, Wenjun, Xu, Shengrui, Zhao, Shenglei, Zhang, Jincheng, Hao, Yue
• Format: Article
• Language: English
• Subjects: Applied physics; Defects; Gallium nitrides; Heterostructures; High electron mobility transistors; High temperature; Linearity; Metalorganic chemical vapor deposition; Organic chemistry; Room temperature; Semiconductor devices; Transconductance
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0172376

In this work, an improved method of metal-organic chemical vapor deposition was utilized to grow high-quality AlPN/GaN heterostructures. The characteristics of AlPN those are essential to achieving high linearity in the resulting devices were then investigated. High linearity AlPN/GaN high electron mobility transistors (HEMTs) with flatter transconductance curves were fabricated, in which the gate voltage swings are 1.85 and 4.35 V at 300 and 400 K when Gm drops 5% from Gm,max. Additionally, the impact of P anti-site defects and surface states on the high linearity of AlPN/GaN HEMTs at different temperatures was discussed. It was found that while both factors benefit linearity at room temperature, only the P anti-site defects have a positive effect on linearity at high temperatures. The results demonstrate the significant advantages of AlPN-based structures in high linearity device applications and provide instructive principles for improving linearity.