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Effect of Silicon Carbide Content on Bulk Electrical Resistance of Free-Sintered AlN–SiC Composites
— It is reported that the bulk electrical resistance of AlN–SiC composites decreases from 1.1 × 10 8 до 3.0 × 10 2 Ω cm when the content of silicon carbide increases from 20 to 55 wt %. In such composites, with a SiC content less than 50%, the porosity does not exceed 3% and, therefore, does not ha...
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Published in: | Journal of superhard materials 2023-10, Vol.45 (5), p.402-404 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | —
It is reported that the bulk electrical resistance of AlN–SiC composites decreases from 1.1 × 10
8
до 3.0 × 10
2
Ω cm when the content of silicon carbide increases from 20 to 55 wt %. In such composites, with a SiC content less than 50%, the porosity does not exceed 3% and, therefore, does not have a significant effect on the value of electrical resistance. The detected dependence of the electrical resistance on the SiC content has the form of a straight line inclined to the abscissa axis, if the resistance values are given on a logarithmic scale. |
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ISSN: | 1063-4576 1934-9408 |
DOI: | 10.3103/S1063457623050040 |