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Effect of Silicon Carbide Content on Bulk Electrical Resistance of Free-Sintered AlN–SiC Composites
— It is reported that the bulk electrical resistance of AlN–SiC composites decreases from 1.1 × 10 8 до 3.0 × 10 2 Ω cm when the content of silicon carbide increases from 20 to 55 wt %. In such composites, with a SiC content less than 50%, the porosity does not exceed 3% and, therefore, does not ha...
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Published in: | Journal of superhard materials 2023-10, Vol.45 (5), p.402-404 |
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creator | Chasnyk, V. I. Chasnyk, D. V. Kaidash, O. M. |
description | —
It is reported that the bulk electrical resistance of AlN–SiC composites decreases from 1.1 × 10
8
до 3.0 × 10
2
Ω cm when the content of silicon carbide increases from 20 to 55 wt %. In such composites, with a SiC content less than 50%, the porosity does not exceed 3% and, therefore, does not have a significant effect on the value of electrical resistance. The detected dependence of the electrical resistance on the SiC content has the form of a straight line inclined to the abscissa axis, if the resistance values are given on a logarithmic scale. |
doi_str_mv | 10.3103/S1063457623050040 |
format | article |
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It is reported that the bulk electrical resistance of AlN–SiC composites decreases from 1.1 × 10
8
до 3.0 × 10
2
Ω cm when the content of silicon carbide increases from 20 to 55 wt %. In such composites, with a SiC content less than 50%, the porosity does not exceed 3% and, therefore, does not have a significant effect on the value of electrical resistance. The detected dependence of the electrical resistance on the SiC content has the form of a straight line inclined to the abscissa axis, if the resistance values are given on a logarithmic scale.</description><identifier>ISSN: 1063-4576</identifier><identifier>EISSN: 1934-9408</identifier><identifier>DOI: 10.3103/S1063457623050040</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Chemistry ; Chemistry and Materials Science ; Composite materials ; Electrical resistance ; Letters to the Editor ; Physical Chemistry ; Silicon carbide ; Sintering (powder metallurgy) ; Straight lines</subject><ispartof>Journal of superhard materials, 2023-10, Vol.45 (5), p.402-404</ispartof><rights>Allerton Press, Inc. 2023. ISSN 1063-4576, Journal of Superhard Materials, 2023, Vol. 45, No. 5, pp. 402–404. © Allerton Press, Inc., 2023. Ukrainian Text © The Author(s), 2023, published in Nadtverdi Materialy, 2023, Vol. 45, No. 5, pp. 103–106.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-78b5e9a7fa6328c2c7b2b2761213b62dba9f17e2307f095145dea811dc076be13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Chasnyk, V. I.</creatorcontrib><creatorcontrib>Chasnyk, D. V.</creatorcontrib><creatorcontrib>Kaidash, O. M.</creatorcontrib><title>Effect of Silicon Carbide Content on Bulk Electrical Resistance of Free-Sintered AlN–SiC Composites</title><title>Journal of superhard materials</title><addtitle>J. Superhard Mater</addtitle><description>—
It is reported that the bulk electrical resistance of AlN–SiC composites decreases from 1.1 × 10
8
до 3.0 × 10
2
Ω cm when the content of silicon carbide increases from 20 to 55 wt %. In such composites, with a SiC content less than 50%, the porosity does not exceed 3% and, therefore, does not have a significant effect on the value of electrical resistance. The detected dependence of the electrical resistance on the SiC content has the form of a straight line inclined to the abscissa axis, if the resistance values are given on a logarithmic scale.</description><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Composite materials</subject><subject>Electrical resistance</subject><subject>Letters to the Editor</subject><subject>Physical Chemistry</subject><subject>Silicon carbide</subject><subject>Sintering (powder metallurgy)</subject><subject>Straight lines</subject><issn>1063-4576</issn><issn>1934-9408</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kM1Kw0AUhQdRsFYfwN2A6-j8JPOzrKFVoSgYXYfJ5I5MTZM6ky7c-Q6-oU_ilAouxNW9cL5zLvcgdE7JJaeEX1WUCJ4XUjBOCkJycoAmVPM80zlRh2lPcrbTj9FJjCtCikJzOUEwdw7siAeHK995O_S4NKHxLeBy6Efok9Tj6233iuddAoO3psOPEH0cTW9hZ1wEgKzyiQ7Q4ll3__XxWfkyBaw3Q_QjxFN05EwX4exnTtHzYv5U3mbLh5u7crbMLBNqzKRqCtBGOiM4U5ZZ2bCGSUEZ5Y1gbWO0oxLSi9IRXdC8aMEoSltLpGiA8im62OduwvC2hTjWq2Eb-nSyZkppwammMlF0T9kwxBjA1Zvg1ya815TUuzbrP20mD9t7YmL7Fwi_yf-bvgEroXYm</recordid><startdate>20231001</startdate><enddate>20231001</enddate><creator>Chasnyk, V. I.</creator><creator>Chasnyk, D. V.</creator><creator>Kaidash, O. M.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20231001</creationdate><title>Effect of Silicon Carbide Content on Bulk Electrical Resistance of Free-Sintered AlN–SiC Composites</title><author>Chasnyk, V. I. ; Chasnyk, D. V. ; Kaidash, O. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-78b5e9a7fa6328c2c7b2b2761213b62dba9f17e2307f095145dea811dc076be13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Composite materials</topic><topic>Electrical resistance</topic><topic>Letters to the Editor</topic><topic>Physical Chemistry</topic><topic>Silicon carbide</topic><topic>Sintering (powder metallurgy)</topic><topic>Straight lines</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chasnyk, V. I.</creatorcontrib><creatorcontrib>Chasnyk, D. V.</creatorcontrib><creatorcontrib>Kaidash, O. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of superhard materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chasnyk, V. I.</au><au>Chasnyk, D. V.</au><au>Kaidash, O. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Silicon Carbide Content on Bulk Electrical Resistance of Free-Sintered AlN–SiC Composites</atitle><jtitle>Journal of superhard materials</jtitle><stitle>J. Superhard Mater</stitle><date>2023-10-01</date><risdate>2023</risdate><volume>45</volume><issue>5</issue><spage>402</spage><epage>404</epage><pages>402-404</pages><issn>1063-4576</issn><eissn>1934-9408</eissn><abstract>—
It is reported that the bulk electrical resistance of AlN–SiC composites decreases from 1.1 × 10
8
до 3.0 × 10
2
Ω cm when the content of silicon carbide increases from 20 to 55 wt %. In such composites, with a SiC content less than 50%, the porosity does not exceed 3% and, therefore, does not have a significant effect on the value of electrical resistance. The detected dependence of the electrical resistance on the SiC content has the form of a straight line inclined to the abscissa axis, if the resistance values are given on a logarithmic scale.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.3103/S1063457623050040</doi><tpages>3</tpages></addata></record> |
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subjects | Chemistry Chemistry and Materials Science Composite materials Electrical resistance Letters to the Editor Physical Chemistry Silicon carbide Sintering (powder metallurgy) Straight lines |
title | Effect of Silicon Carbide Content on Bulk Electrical Resistance of Free-Sintered AlN–SiC Composites |
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