Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Low-temperature homoepitaxial growth of β-Ga2O3(-201) has been successfully demonstrated by the atmospheric pressure plasma-enhanced chemical vapor deposition technique. To search for low-temperature growth, temperature-dependent studies were carried out between 350 and 600 °C. A high N2 gas flow ra...

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Bibliographic Details
Published in:AIP advances 2023-11, Vol.13 (11), p.115224-115224-5
Main Authors: Islam, Md. Earul, Shimamoto, Kento, Yoshimura, Takeshi, Fujimura, Norifumi
Format: Article
Language:English
Subjects:
Atmospheric pressure
Epitaxial growth
Flow velocity
Gallium oxides
Gas flow
Grain growth
Low temperature
Oxygen plasma
Plasma enhanced chemical vapor deposition
Temperature dependence
Thin films
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Summary:Low-temperature homoepitaxial growth of β-Ga2O3(-201) has been successfully demonstrated by the atmospheric pressure plasma-enhanced chemical vapor deposition technique. To search for low-temperature growth, temperature-dependent studies were carried out between 350 and 600 °C. A high N2 gas flow rate, low gallium source concentration, and high oxygen flow rate ratio played key roles in growing independent and homogeneous multiple nuclei of Ga2O3, leading to three-dimensional grain growth mode, single crystallinity, and the highest growth rate of ⁓0.17 µm/h at 350 °C. The highly reactive atmospheric pressure oxygen plasma actively led to epitaxial growth. The low thermal budget homoepitaxial growth is a record reduction reported thus far.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0178100