A High Power Electro-Absorption Modulated Laser Integrated With SOA Suitable for 50G PON Application

An EML-SOA with emitting wavelength at 1342nm suitable for 50G PON application was developed. For the first time we demonstrated it can emit over 15.3dBm dynamic output power with 8.3dB extinction ratio at 1.5Vpp, clear eye opening was achieved at 50Gb/s and BER measurements show less than 0.1dB pen...

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Bibliographic Details
Published in:IEEE photonics technology letters 2024-01, Vol.36 (1), p.5-7
Main Authors: Chen, Xin, Wang, Haibo, Cronin, Richard, Griffiths, James, Talli, Giuseppe, Rosales, Ricardo, Atra, Kebede Tesema, Lin, Youxi, Huang, Rongfang, Pate, Malcolm, Repiso, Eva, Silva, Matteo, Rogers, David, Wang, Chaoyi, Burlinson, Stephen, Berry, Graham, Aivaliotis, Pantelis, Liu, Xuefeng, Zhou, Bo
Format: Article
Language:English
Subjects:
50G PON
Bandwidth
Chirp
distributed reflection laser
electro-absorption modulator
Passive optical networks
Power amplifiers
Power generation
Semiconductor device measurement
Semiconductor laser
semiconductor optical amplifier
Semiconductor optical amplifiers
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Summary:An EML-SOA with emitting wavelength at 1342nm suitable for 50G PON application was developed. For the first time we demonstrated it can emit over 15.3dBm dynamic output power with 8.3dB extinction ratio at 1.5Vpp, clear eye opening was achieved at 50Gb/s and BER measurements show less than 0.1dB penalty observed after 20km transmission.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2023.3330261