Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation

• Published in: Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2023-12, Vol.17 (6), p.1372-1377
• Main Authors: Kozlovski, V. V., Vasil’ev, A. E., Lebedev, A. A., Zhurkin, E. E., Levinshtein, M. E., Strelchuk, A. M.
• Format: Article
• Language: English
• Subjects: Atomic properties; Chemistry and Materials Science; Gallium nitrides; Gallium oxides; Materials Science; Proton irradiation; Radiation damage; Recoil atoms; Semiconductors; Surfaces and Interfaces; Thin Films
• ISSN: 1027-4510; 1819-7094
• DOI: 10.1134/S1027451023060319

Using the mathematical modeling of a displacement cascade in two wide-gap semiconductors based on gallium, gallium oxide (Ga 2 O 3 ), and gallium nitride (GaN), the features of the generation of Frenkel pairs during the scattering of protons with energies of 8 and 15 MeV are considered. The number of displacements created not only by primary knocked-out atoms, but also by recoil atoms generated in displacement cascades is calculated for the first time. Calculations show that under the proton irradiation of Ga 2 O 3 , for example, the fraction of vacancies in the oxygen sublattice created directly by protons is only 12%. The remaining 88% are created by recoil atoms in cascade processes. For the gallium sublattice, these fractions are 25 and 75%, respectively. Therefore, the processes of compensating the conductivity of GaN and Ga 2 O 3 observed under proton irradiation will be determined by deep centers created not by primary knocked-out atoms, but by recoil atoms formed in displacement cascades. A comparison with experimental data is made, and the fraction of Frenkel pairs dissociating during irradiation is estimated.