Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method

It was shown recently [1, 2] that in semiconducting crystals it is possible to attain an appreciable orientation of the spins of the non-equilibrium carriers as a result of interband transitions caused by absorption of polarized light. Observation of optical orientation makes it possible to extend t...

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Bibliographic Details
Published in:JETP letters 2023-12, Vol.118 (Suppl 1), p.S35-S37
Main Authors: Garbuzov, D. Z., Ekimov, A. I., Safarov, V. I.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Electron spin
Molecular
Optical and Plasma Physics
Orientation
Particle and Nuclear Physics
Physics
Physics and Astronomy
Polarized light
Quantum Information Technology
Relaxation time
Solid State Physics
Spintronics
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Summary:It was shown recently [1, 2] that in semiconducting crystals it is possible to attain an appreciable orientation of the spins of the non-equilibrium carriers as a result of interband transitions caused by absorption of polarized light. Observation of optical orientation makes it possible to extend to semiconductors the research methods widely used in atomic spectroscopy [3], and particularly to investigate relaxation processes in a crystal under stationary conditions.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364023130106