Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method

It was shown recently [1, 2] that in semiconducting crystals it is possible to attain an appreciable orientation of the spins of the non-equilibrium carriers as a result of interband transitions caused by absorption of polarized light. Observation of optical orientation makes it possible to extend t...

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Published in:JETP letters 2023-12, Vol.118 (Suppl 1), p.S35-S37
Main Authors: Garbuzov, D. Z., Ekimov, A. I., Safarov, V. I.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Electron spin
Molecular
Optical and Plasma Physics
Orientation
Particle and Nuclear Physics
Physics
Physics and Astronomy
Polarized light
Quantum Information Technology
Relaxation time
Solid State Physics
Spintronics
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container_end_page S37
container_issue Suppl 1
container_start_page S35
container_title JETP letters
container_volume 118
creator Garbuzov, D. Z.
Ekimov, A. I.
Safarov, V. I.
description It was shown recently [1, 2] that in semiconducting crystals it is possible to attain an appreciable orientation of the spins of the non-equilibrium carriers as a result of interband transitions caused by absorption of polarized light. Observation of optical orientation makes it possible to extend to semiconductors the research methods widely used in atomic spectroscopy [3], and particularly to investigate relaxation processes in a crystal under stationary conditions.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2900669344</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2900669344</sourcerecordid><originalsourceid>FETCH-LOGICAL-c311t-78427fdcf794282b119b2eb2ded85979849573e4f5371fdf790ac0523709c53e3</originalsourceid><addsrcrecordid>eNp1kEtLxDAUhYMoOI7-AHcF19W82jRLGcYHzDDgjOvSprdOhjapSQoK_nhbq7gQVxfuOd85cBC6JPiaEMZvthhTwlKOKSMME5weoRnBEscpz8Qxmo1yPOqn6Mz7A8aEZEzM0McaCt87aMGEyNZR2EO00jUE3UJUmOrnt-20iZ-gKd6KoK2JdqM-aMsGVHDW-EibaAutVtZUvQrW-ah8_0I3XdCqaOKN00PJhK8h7G11jk7qovFw8X3n6PluuVs8xKvN_ePidhUrRkiIRcapqCtVC8lpRktCZEmhpBVUWSKFzLhMBANeJ0yQuhpsuFA4oUxgqRIGbI6uptzO2dcefMgPtndmqMypxDhNJeN8cJHJpZz13kGdd063hXvPCc7HkfM_Iw8MnRg_eM0LuN_k_6FPxdV9-Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2900669344</pqid></control><display><type>article</type><title>Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method</title><source>Springer Link</source><creator>Garbuzov, D. Z. ; Ekimov, A. I. ; Safarov, V. I.</creator><creatorcontrib>Garbuzov, D. Z. ; Ekimov, A. I. ; Safarov, V. I.</creatorcontrib><description>It was shown recently [1, 2] that in semiconducting crystals it is possible to attain an appreciable orientation of the spins of the non-equilibrium carriers as a result of interband transitions caused by absorption of polarized light. Observation of optical orientation makes it possible to extend to semiconductors the research methods widely used in atomic spectroscopy [3], and particularly to investigate relaxation processes in a crystal under stationary conditions.</description><identifier>ISSN: 0021-3640</identifier><identifier>EISSN: 1090-6487</identifier><identifier>DOI: 10.1134/S0021364023130106</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Atomic ; Biological and Medical Physics ; Biophysics ; Electron spin ; Molecular ; Optical and Plasma Physics ; Orientation ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Polarized light ; Quantum Information Technology ; Relaxation time ; Solid State Physics ; Spintronics</subject><ispartof>JETP letters, 2023-12, Vol.118 (Suppl 1), p.S35-S37</ispartof><rights>The Author(s) 2023. ISSN 0021-3640, JETP Letters, 2023, Vol. 118, Suppl. 1, pp. S35–S37. © The Author(s), 2023. This article is an open access publication. ISSN 0021-3640, JETP Letters, 1970, Vol. 13, No. 1, pp. 24–26. © JETP Letters, 1970. Russian Text © The Author(s), 1970, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 1970, Vol. 13, No. 1, pp. 36–40.</rights><rights>The Author(s) 2023. ISSN 0021-3640, JETP Letters, 2023, Vol. 118, Suppl. 1, pp. S35–S37. © The Author(s), 2023. This article is an open access publication. ISSN 0021-3640, JETP Letters, 1970, Vol. 13, No. 1, pp. 24–26. © JETP Letters, 1970. Russian Text © The Author(s), 1970, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 1970, Vol. 13, No. 1, pp. 36–40. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c311t-78427fdcf794282b119b2eb2ded85979849573e4f5371fdf790ac0523709c53e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Garbuzov, D. Z.</creatorcontrib><creatorcontrib>Ekimov, A. I.</creatorcontrib><creatorcontrib>Safarov, V. I.</creatorcontrib><title>Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method</title><title>JETP letters</title><addtitle>Jetp Lett</addtitle><description>It was shown recently [1, 2] that in semiconducting crystals it is possible to attain an appreciable orientation of the spins of the non-equilibrium carriers as a result of interband transitions caused by absorption of polarized light. Observation of optical orientation makes it possible to extend to semiconductors the research methods widely used in atomic spectroscopy [3], and particularly to investigate relaxation processes in a crystal under stationary conditions.</description><subject>Atomic</subject><subject>Biological and Medical Physics</subject><subject>Biophysics</subject><subject>Electron spin</subject><subject>Molecular</subject><subject>Optical and Plasma Physics</subject><subject>Orientation</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Polarized light</subject><subject>Quantum Information Technology</subject><subject>Relaxation time</subject><subject>Solid State Physics</subject><subject>Spintronics</subject><issn>0021-3640</issn><issn>1090-6487</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLxDAUhYMoOI7-AHcF19W82jRLGcYHzDDgjOvSprdOhjapSQoK_nhbq7gQVxfuOd85cBC6JPiaEMZvthhTwlKOKSMME5weoRnBEscpz8Qxmo1yPOqn6Mz7A8aEZEzM0McaCt87aMGEyNZR2EO00jUE3UJUmOrnt-20iZ-gKd6KoK2JdqM-aMsGVHDW-EibaAutVtZUvQrW-ah8_0I3XdCqaOKN00PJhK8h7G11jk7qovFw8X3n6PluuVs8xKvN_ePidhUrRkiIRcapqCtVC8lpRktCZEmhpBVUWSKFzLhMBANeJ0yQuhpsuFA4oUxgqRIGbI6uptzO2dcefMgPtndmqMypxDhNJeN8cJHJpZz13kGdd063hXvPCc7HkfM_Iw8MnRg_eM0LuN_k_6FPxdV9-Q</recordid><startdate>20231201</startdate><enddate>20231201</enddate><creator>Garbuzov, D. Z.</creator><creator>Ekimov, A. I.</creator><creator>Safarov, V. I.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20231201</creationdate><title>Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method</title><author>Garbuzov, D. Z. ; Ekimov, A. I. ; Safarov, V. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-78427fdcf794282b119b2eb2ded85979849573e4f5371fdf790ac0523709c53e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Atomic</topic><topic>Biological and Medical Physics</topic><topic>Biophysics</topic><topic>Electron spin</topic><topic>Molecular</topic><topic>Optical and Plasma Physics</topic><topic>Orientation</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Polarized light</topic><topic>Quantum Information Technology</topic><topic>Relaxation time</topic><topic>Solid State Physics</topic><topic>Spintronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Garbuzov, D. Z.</creatorcontrib><creatorcontrib>Ekimov, A. I.</creatorcontrib><creatorcontrib>Safarov, V. I.</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><jtitle>JETP letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Garbuzov, D. Z.</au><au>Ekimov, A. I.</au><au>Safarov, V. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method</atitle><jtitle>JETP letters</jtitle><stitle>Jetp Lett</stitle><date>2023-12-01</date><risdate>2023</risdate><volume>118</volume><issue>Suppl 1</issue><spage>S35</spage><epage>S37</epage><pages>S35-S37</pages><issn>0021-3640</issn><eissn>1090-6487</eissn><abstract>It was shown recently [1, 2] that in semiconducting crystals it is possible to attain an appreciable orientation of the spins of the non-equilibrium carriers as a result of interband transitions caused by absorption of polarized light. Observation of optical orientation makes it possible to extend to semiconductors the research methods widely used in atomic spectroscopy [3], and particularly to investigate relaxation processes in a crystal under stationary conditions.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S0021364023130106</doi><oa>free_for_read</oa></addata></record>
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subjects Atomic
Biological and Medical Physics
Biophysics
Electron spin
Molecular
Optical and Plasma Physics
Orientation
Particle and Nuclear Physics
Physics
Physics and Astronomy
Polarized light
Quantum Information Technology
Relaxation time
Solid State Physics
Spintronics
title Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T05%3A11%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Measurement%20of%20the%20Lifetime%20and%20of%20the%20Spin-Relaxation%20Time%20of%20Electrons%20in%20Semiconductors%20by%20the%20Optical-Orientation%20Method&rft.jtitle=JETP%20letters&rft.au=Garbuzov,%20D.%20Z.&rft.date=2023-12-01&rft.volume=118&rft.issue=Suppl%201&rft.spage=S35&rft.epage=S37&rft.pages=S35-S37&rft.issn=0021-3640&rft.eissn=1090-6487&rft_id=info:doi/10.1134/S0021364023130106&rft_dat=%3Cproquest_cross%3E2900669344%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c311t-78427fdcf794282b119b2eb2ded85979849573e4f5371fdf790ac0523709c53e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2900669344&rft_id=info:pmid/&rfr_iscdi=true