An Apertureless Scanning Near-Field Optical Microscope Probe with a Lateral Resolution of 10 – 15 nm Observed with a Semiconductor Structure

Using InSb/GaSb semiconductor quantum dots, we demonstrate the lateral spatial resolution of scattering apertureless near-field microscope equal to 10 – 15 nm at a wavelength of λ = 10 . 7 μm provided by a single-mode CO 2 laser. The measurement conditions make it possible to undoubtedly exclude any...

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Bibliographic Details
Published in:Journal of Russian laser research 2023-11, Vol.44 (6), p.656-662
Main Authors: Kazantsev, D. V., Klekovkin, A. V., Minaev, I. I., Kazantseva, E. A., Nikolaev, S. N.
Format: Article
Language:English
Subjects:
Carbon dioxide
Carbon dioxide lasers
Electron gas
Gallium antimonides
Indium antimonide
Intermetallic compounds
Lasers
Microwaves
Near field optical microscopes
Optical Devices
Optical microscopes
Optics
Photonics
Physics
Physics and Astronomy
Quantum dots
RF and Optical Engineering
Spatial resolution
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Summary:Using InSb/GaSb semiconductor quantum dots, we demonstrate the lateral spatial resolution of scattering apertureless near-field microscope equal to 10 – 15 nm at a wavelength of λ = 10 . 7 μm provided by a single-mode CO 2 laser. The measurement conditions make it possible to undoubtedly exclude any artifacts caused by the sample topography and other similar factors. We identify the strongly localized in-plane near-field signal with a two-dimensional electron gas clamped on the InSb/GaSb interface of quantum dots.
ISSN:1071-2836
1573-8760
DOI:10.1007/s10946-023-10174-2