Performance enhancement of InGaN based near ultraviolet LEDs with asymmetric staggered quantum wells

• Published in: Optical and quantum electronics 2024-02, Vol.56 (2), Article 133
• Main Authors: Xu, Chaozhi, Cai, Lie, Chen, Zhichao, Lin, Haoxiang, Niu, Kai, Cheng, Zai-Jun, Sun, Dong, Zhao, MingJie
• Format: Article
• Language: English
• Subjects: Aluminum gallium nitrides; Carrier recombination; Carrier waves; Characterization and Evaluation of Materials; Computer Communication Networks; Electric fields; Electrical Engineering; Electrons; Energy bands; Gallium nitrides; Indium gallium nitrides; Lasers; Light emitting diodes; Optical Devices; Optics; Performance enhancement; Photonics; Physics; Physics and Astronomy; Quantum wells; Radiation; Wave functions
• ISSN: 0306-8919; 1572-817X
• DOI: 10.1007/s11082-023-05714-8

Like GaN-based LEDs, the further improvement of InGaN based near UV LED performance also faces a typical problem: the spatial separation of carrier wave functions caused by the polarization electric field in the active region. In this paper, a novel three-layer asymmetric staggered quantum well with special gradually changing In-component distribution is proposed and applied to InGaN/AlGaN near UV LED to change the carrier distribution and improve the probability of carrier radiation recombination. The proposed new quantum well structure improves its energy band by controlling the In-component, to enhance the carrier limiting effect and then improve the possibility of carrier wave function overlap. Increased radiation recombination in the MQWs region will undoubtedly result from increased carrier wave function overlap, which will then enhance the luminescence performance of the structure. In conclusion, the simulation results show that compared with the traditional structure, the light output power (LOP) of the new structure is increased by 12.87% under the current condition of 100 A/cm 2 .