Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices

Electrically detected magnetic resonance and near-zero field magnetoresistance are techniques that probe defect states at dielectric interfaces critical for metal–oxide–semiconductor (MOS) electronic devices such as the Si/SiO2 MOS field effect transistor (MOSFET). A comprehensive theory, adapted fr...

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Bibliographic Details
Published in:Applied physics letters 2023-12, Vol.123 (25)
Main Authors: Harmon, Nicholas J., Ashton, James P., Lenahan, Patrick M., Flatté, Michael E.
Format: Article
Language:English
Subjects:
Applied physics
Field effect transistors
Magnetic fields
Magnetic resonance
Magnetoresistance
Magnetoresistivity
Metal oxide semiconductors
MOS devices
Semiconductor devices
Silicon dioxide
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Summary:Electrically detected magnetic resonance and near-zero field magnetoresistance are techniques that probe defect states at dielectric interfaces critical for metal–oxide–semiconductor (MOS) electronic devices such as the Si/SiO2 MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0172275