Characterization of thin films Al/p-Cu2ZnSnS4 (CZTS)/Mo Schottky diode: the effect of CZTS thin film thickness

In this study, the effect of Cu 2 ZnSnS 4 (CZTS) film thickness ( d ) on structural and morphological properties of Cu 2 ZnSnS 4 /Mo films and electrical properties of Al/ p -Cu 2 ZnSnS 4 /Mo Schottky diodes was investigated. X-ray diffraction, Raman spectroscopy, and scanning electron microscopy an...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2024, Vol.35 (1), p.22, Article 22
Main Authors: Bousselmi, G., Hannachi, A., Khemiri, N., Kanzari, M.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Copper zinc tin sulfide
Current voltage characteristics
Diodes
Electrical properties
Film thickness
Glass substrates
Investigations
Materials Science
Molybdenum
Morphology
Optical and Electronic Materials
Photocatalysis
Raman spectroscopy
Scanning electron microscopy
Schottky diodes
Semiconductors
Spectrum analysis
Thin films
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Summary:In this study, the effect of Cu 2 ZnSnS 4 (CZTS) film thickness ( d ) on structural and morphological properties of Cu 2 ZnSnS 4 /Mo films and electrical properties of Al/ p -Cu 2 ZnSnS 4 /Mo Schottky diodes was investigated. X-ray diffraction, Raman spectroscopy, and scanning electron microscopy analyses suggest an improvement in crystalline quality of CZTS/Mo films with the increase of thickness. Electrical properties of Al/ p -CZTS/Mo Schottky diodes were analyzed using I –V characteristics. Schottky diode parameters such as ideality factor, saturation current, and series resistance were calculated. Ideality factor and series resistance decrease from 1.62 to 1.32 and from 206 to 144 Ω, respectively, by increasing the thickness of CZTS layer. Impedance spectroscopy measurements highlight a decrease in resistance as a function of temperature, suggesting thermal activation of the process.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-023-11575-4