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Controllable Growth of 2D V3S5 Single Crystal by Chemical Vapor Deposition
2D intercalated vanadium chalcogenides have attracted intensive interest based on their physical properties and potential applications. However, controllable synthesis of the intercalated vanadium chalcogenides via chemical vapor deposition is still a big challenge. Here, a binary metal precursor co...
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Published in: | Advanced functional materials 2024-01, Vol.34 (1), p.n/a |
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Main Authors: | , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | 2D intercalated vanadium chalcogenides have attracted intensive interest based on their physical properties and potential applications. However, controllable synthesis of the intercalated vanadium chalcogenides via chemical vapor deposition is still a big challenge. Here, a binary metal precursor co‐reaction growth mechanism to manipulate the evaporation rate of vanadium precursors is reported, thus the intercalated 2D V1+XS2 – V3S5 single crystal can be controllably synthesized. The quality of 2D V3S5 nanosheets is identified by Raman spectroscopy and high‐resolution scanning transmission electron microscopy. Interestingly, a phase transition in 2D metallic V3S5 nanosheets is observed at 20 K. Meanwhile, the resistance upturn and unsaturated negative magnetoresistance induced by electron–electron interaction is confirmed. This work proposes a new strategy to synthesize the 2D intercalated VxSy single crystals with different compositions for studying their excellent properties and potential applications.
Herein, an effective binary metal precursor co‐reaction chemical vapor deposition method to synthesize the self‐intercalated V3S5 nanosheets is revealed. A phase transition in V3S5 crystal appears at 20 K. Importantly, the electron–electron interaction was confirmed in the V3S5 nanosheets. This work realizes a new strategy to synthesize 2D intercalated VxSy single crystals for fundamental studies and spintronic applications. |
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ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.202308356 |