Ultrathin Body and Buried Oxide SOI MOSFETs With Non-LDD Source/Drain Extensions: A Simulation Study

An ultrathin body and buried oxide (UTBB) SOI MOSFETs with novel non-LDD source/drain extensions are proposed, where highly conductive paths are induced by positive charges locally distributed in the buried oxide (BOX) connecting the channel and respective source and drain. TCAD simulation shows tha...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2024-01, Vol.71 (1), p.412-417
Main Authors: Zhang, Dongli, Guo, Yeye, Zhou, Guoao, Chen, Lekai, Wang, Mingxiang, Wang, Huaisheng
Format: Article
Language:English
Subjects:
Doping
Electrostatics
Ground plane
Immune system
Logic gates
MOSFET
MOSFETs
Performance evaluation
short-channel effect (SCE)
Silicon
Silicon-on-insulator
SOI
SOI (semiconductors)
ultrathin body and buried oxide (UTBB)
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Summary:An ultrathin body and buried oxide (UTBB) SOI MOSFETs with novel non-LDD source/drain extensions are proposed, where highly conductive paths are induced by positive charges locally distributed in the buried oxide (BOX) connecting the channel and respective source and drain. TCAD simulation shows that the performance of the proposed MOSFET is superior to conventional UTBB MOSFETs of the same footprint in terms of drain-induced barrier lowering (DIBL), subthreshold swing (SS), and off-state current. Even with much relaxed device dimensions, such as thicker silicon body and/or BOX either with or without introducing a ground plane (GP), it can still achieve higher driving current and similar short-channel effect (SCE) immunity as the conventional UTBB MOSFETs. Such advantages of the proposed MOSFETs are due to better gate electrostatics over the channel benefited from the novel source/drain extensions.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3335169