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Spin-orbit coupling induced electronic, optical and electronic transport properties of Janus BiTei monolayer
We report the spin-orbit coupling (SOC) induced electronic, optical and electronic transport properties of Janus BiTeI monolayer using density functional theory and semi-classical Boltzmann’s transport theory. The calculated indirect bandgap value for BiTeI monolayer using SOC level of theory is 0.6...
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description | We report the spin-orbit coupling (SOC) induced electronic, optical and electronic transport properties of Janus BiTeI monolayer using density functional theory and semi-classical Boltzmann’s transport theory. The calculated indirect bandgap value for BiTeI monolayer using SOC level of theory is 0.61 eV. The in-plane optical absorption peak for the BiTeI monolayer is calculated at 2.33 eV. The calculated maximum value of power factor (PF) for BiTeI lies in the range of 151-235 V2/K2Ωms within a temperature range of 300K-700K. The high value of power factor and strong absorption ability with a finite value of bandgap indicates that BiTeI monolayer is a promising candidate for thermoelectric and optoelectronic application. |
doi_str_mv | 10.1063/5.0179203 |
format | conference_proceeding |
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V. ; Tyagi, Mohit ; Mishra, Ajay Kumar ; Rout, Sanjeeb Kumar</contributor><creatorcontrib>Chauhan, Poonam ; Kumar, Ashok ; Udupa, D. V. ; Tyagi, Mohit ; Mishra, Ajay Kumar ; Rout, Sanjeeb Kumar</creatorcontrib><description>We report the spin-orbit coupling (SOC) induced electronic, optical and electronic transport properties of Janus BiTeI monolayer using density functional theory and semi-classical Boltzmann’s transport theory. The calculated indirect bandgap value for BiTeI monolayer using SOC level of theory is 0.61 eV. The in-plane optical absorption peak for the BiTeI monolayer is calculated at 2.33 eV. The calculated maximum value of power factor (PF) for BiTeI lies in the range of 151-235 V2/K2Ωms within a temperature range of 300K-700K. The high value of power factor and strong absorption ability with a finite value of bandgap indicates that BiTeI monolayer is a promising candidate for thermoelectric and optoelectronic application.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0179203</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorption ; Density functional theory ; Electron spin ; Electron transport ; Energy gap ; Mathematical analysis ; Monolayers ; Optical properties ; Optoelectronics ; Power factor ; Spin-orbit interactions ; Transport properties ; Transport theory</subject><ispartof>AIP Conference Proceedings, 2024, Vol.2995 (1)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). 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The high value of power factor and strong absorption ability with a finite value of bandgap indicates that BiTeI monolayer is a promising candidate for thermoelectric and optoelectronic application.</description><subject>Absorption</subject><subject>Density functional theory</subject><subject>Electron spin</subject><subject>Electron transport</subject><subject>Energy gap</subject><subject>Mathematical analysis</subject><subject>Monolayers</subject><subject>Optical properties</subject><subject>Optoelectronics</subject><subject>Power factor</subject><subject>Spin-orbit interactions</subject><subject>Transport properties</subject><subject>Transport theory</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2024</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNpNUEtLAzEYDKJgrR78BwFv4tYkX7LpHrX4pODBCt6WJM1KyjaJSfbQf--W9uBpYJgXg9A1JTNKargXM0JlwwicoAkVglaypvUpmhDS8Ipx-D5HFzlvCGGNlPMJ6j-j81VI2hVswhB753-w8-vB2DW2vTUlBe_MHQ6xOKN6rPx_HpekfI4hFRxTiDYVZzMOHX5Xfsj40a2sw9vgQ692Nl2is0712V4dcYq-np9Wi9dq-fHytnhYVpEClErNgUjNtdX1fmWtaytVB41hlkgwVnCiBBGgmdKgeQMSQDUdJ4aTNTcUpujmkDtu-h1sLu0mDMmPlS1rKAjG5qN9im4PqmxcUcUF38bktirtWkra_ZutaI9vwh-LYWf_</recordid><startdate>20240112</startdate><enddate>20240112</enddate><creator>Chauhan, Poonam</creator><creator>Kumar, Ashok</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20240112</creationdate><title>Spin-orbit coupling induced electronic, optical and electronic transport properties of Janus BiTei monolayer</title><author>Chauhan, Poonam ; Kumar, Ashok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p133t-a8307b4beb629776b6e7af39c2e073ce540a5053b2ab3b493733a9f40c40d4c13</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorption</topic><topic>Density functional theory</topic><topic>Electron spin</topic><topic>Electron transport</topic><topic>Energy gap</topic><topic>Mathematical analysis</topic><topic>Monolayers</topic><topic>Optical properties</topic><topic>Optoelectronics</topic><topic>Power factor</topic><topic>Spin-orbit interactions</topic><topic>Transport properties</topic><topic>Transport theory</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chauhan, Poonam</creatorcontrib><creatorcontrib>Kumar, Ashok</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chauhan, Poonam</au><au>Kumar, Ashok</au><au>Udupa, D. V.</au><au>Tyagi, Mohit</au><au>Mishra, Ajay Kumar</au><au>Rout, Sanjeeb Kumar</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Spin-orbit coupling induced electronic, optical and electronic transport properties of Janus BiTei monolayer</atitle><btitle>AIP Conference Proceedings</btitle><date>2024-01-12</date><risdate>2024</risdate><volume>2995</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>We report the spin-orbit coupling (SOC) induced electronic, optical and electronic transport properties of Janus BiTeI monolayer using density functional theory and semi-classical Boltzmann’s transport theory. The calculated indirect bandgap value for BiTeI monolayer using SOC level of theory is 0.61 eV. The in-plane optical absorption peak for the BiTeI monolayer is calculated at 2.33 eV. The calculated maximum value of power factor (PF) for BiTeI lies in the range of 151-235 V2/K2Ωms within a temperature range of 300K-700K. The high value of power factor and strong absorption ability with a finite value of bandgap indicates that BiTeI monolayer is a promising candidate for thermoelectric and optoelectronic application.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0179203</doi><tpages>4</tpages></addata></record> |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | Absorption Density functional theory Electron spin Electron transport Energy gap Mathematical analysis Monolayers Optical properties Optoelectronics Power factor Spin-orbit interactions Transport properties Transport theory |
title | Spin-orbit coupling induced electronic, optical and electronic transport properties of Janus BiTei monolayer |
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