A low voltage vertical comb RF MEMS switch

Design and simulations of a novel RF MEMS switch is reported as a solution to many RF wireless applications. A new comb structure for RF MEMS switch is proposed for low voltage and high frequency operations. Isolation degree and actuation voltage, both improved by the new structure. The mechanical a...

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Bibliographic Details
Published in:Microsystem technologies : sensors, actuators, systems integration actuators, systems integration, 2010-06, Vol.16 (6), p.919-924
Main Authors: Aghaei, Samira, Abbaspour-Sani, Ebrahim
Format: Article
Language:English
Subjects:
Actuation
Applied sciences
Circuit properties
Communication
Design
Designers
Electric, optical and optoelectronic circuits
Electronics
Electronics and Microelectronics
Engineering
Exact sciences and technology
Insertion loss
Instrumentation
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Low voltage
Mechanical Engineering
Mechanical engineering. Machine design
Mechanical instruments, equipment and techniques
Microelectromechanical systems
Microelectronic fabrication (materials and surfaces technology)
Micromechanical devices and systems
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Nanotechnology
Parallel plates
Physics
Precision engineering, watch making
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Technical Paper
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Summary:Design and simulations of a novel RF MEMS switch is reported as a solution to many RF wireless applications. A new comb structure for RF MEMS switch is proposed for low voltage and high frequency operations. Isolation degree and actuation voltage, both improved by the new structure. The mechanical and electromagnetic simulation results show better performance for this new switch compared to parallel plate switch. The simulation is done by the intellisuit and HFSS softwares. The Simulation results show that the actuation voltage is decreased by 13% and the linearity of the switch displacement with respect to the actuation voltage is improved by 22% compared to the parallel plate structure. The HFSS simulation results indicate an insertion loss better than 0.33 dB at 50 GHz and isolation greater than 13.4 dB at 50 GHz.
ISSN:0946-7076
1432-1858
DOI:10.1007/s00542-010-1032-x