Two-dimensional silk

The ability to form silk films on semiconductors, metals, and oxides or as free-standing membranes has motivated research into silk-based electronic, optical, and biomedical devices. However, the inherent disorder of native silk limits device performance. Here we report the creation of highly ordere...

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Bibliographic Details
Published in:arXiv.org 2024-01
Main Authors: Shi, Chenyang, Zorman, Marlo, Zhao, Xiao, Salmeron, Miquel B, Pfaendtner, Jim, Xiang Yang Liu, Zhang, Shuai, De Yoreo, James
Format: Article
Language:English
Subjects:
Crystallites
Molecular dynamics
Molecular structure
Multilayers
Silk fibroin
Synchrotrons
Online Access:Get full text
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Summary:The ability to form silk films on semiconductors, metals, and oxides or as free-standing membranes has motivated research into silk-based electronic, optical, and biomedical devices. However, the inherent disorder of native silk limits device performance. Here we report the creation of highly ordered two-dimensional (2D) silk fibroin (SF) layers on van der Waals solids. Using in situ atomic force microscopy, synchrotron-based infrared spectroscopy, and molecular dynamics simulations, we develop a mechanistic understanding of the assembly process. We show that the films consist of lamellae having an epitaxial relationship with the underlying lattice and that the SF molecules exhibit the same Beta-sheet secondary structure seen in the crystallites of the native form. By increasing the SF concentration, multilayer films form via layer-by-layer growth, either along a classical pathway in which SF molecules assemble directly into the lamellae or, at sufficiently high concentrations, along a two-step pathway beginning with formation of a disordered monolayer that subsequently converts into the crystalline phase. Kelvin probe measurements show that these 2D SF layers substantially alter the surface potential. Moreover, the ability to assemble 2D silk on both graphite and MoS2 suggests that it may provide a general platform for silk-based electronics on vdW solids.
ISSN:2331-8422