Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs

Germanium is investigated as basic semiconductor for advanced CMOS nodes. A mobility model at low fields for Ge devices is developed starting from the CVT model, whose parameters are calibrated by comparison with experiments. TCAD simulations of Fully-Depleted (FD) Germanium-On-Insulator (GeOI) n- a...

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Bibliographic Details
Published in:Journal of computational electronics 2006-07, Vol.5 (2-3), p.241-245
Main Authors: Pala, Marco, Le Royer, Cyrille, Le Carval, Gilles, Clavelier, Laurent
Format: Article
Language:English
Subjects:
Depletion
Germanium
MOSFETs
Relaxation time
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Summary:Germanium is investigated as basic semiconductor for advanced CMOS nodes. A mobility model at low fields for Ge devices is developed starting from the CVT model, whose parameters are calibrated by comparison with experiments. TCAD simulations of Fully-Depleted (FD) Germanium-On-Insulator (GeOI) n- and p-MOSFETs are presented using both the drift-diffusion and the energy balance transport models. Effects due to non-equilibrium transport in small devices are estimated by varying the energy-relaxation time of the Ge material and by analyzing the phenomenon of velocity overshoot in the channel. It is found that GeOI MOSFETs furnish robust performance improvements when short device lengths are considered due to the influence of non-local effects.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-006-8851-0