Input and intrinsic device modeling of VCSELs

An efficient model scheme that combines the non-linear behavior of the input parasitics with the intrinsic fundamental device rate equations of the Vertical Cavity Surface Emitting Lasers (VCSELs) is proposed. A systematic methodology for the model parameter extraction from dc and ac, electrical and...

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Bibliographic Details
Published in:Journal of computational electronics 2007-09, Vol.6 (1-3), p.309-312
Main Authors: Minoglou, K., Halkias, G., Kyriakis-Bitzaros, E. D., Syvridis, D.
Format: Article
Language:English
Subjects:
Circuit design
Integrated circuits
Optical measurement
Vertical cavity surface emission lasers
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Summary:An efficient model scheme that combines the non-linear behavior of the input parasitics with the intrinsic fundamental device rate equations of the Vertical Cavity Surface Emitting Lasers (VCSELs) is proposed. A systematic methodology for the model parameter extraction from dc and ac, electrical and optical measurements, is also presented and simulation results are compared with the experimental measurements. Extraction and simulation procedures are implemented in commercial integrated circuit design tools and they are proved to be very fast while they preserve adequate accuracy.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-006-0118-2