Electronic and transport properties of silicon nanowires

The electronic, structural and transport properties of silicon nanowires have been investigated with different approaches. The Empirical Tight-Binding model (ETB) and Linear Combination of Bulk Bands (LCBB) method are used to calculate effect of quantum confinement on electronic energies, bandgap an...

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Published in:Journal of computational electronics 2007-09, Vol.6 (1-3), p.329-333
Main Authors: Sacconi, F., Persson, M. P., Povolotskyi, M., Latessa, L., Pecchia, A., Gagliardi, A., Balint, A., Fraunheim, T., Di Carlo, A.
Format: Article
Language:English
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Green's functions
Nanowires
Quantum confinement
Silicon dioxide
Transport properties
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description The electronic, structural and transport properties of silicon nanowires have been investigated with different approaches. The Empirical Tight-Binding model (ETB) and Linear Combination of Bulk Bands (LCBB) method are used to calculate effect of quantum confinement on electronic energies, bandgap and effective masses in silicon nanowires in function of Si cell size. Both hydrogenated and SiO2 terminated silicon surfaces are studied. Transport properties of nanowires are obtained by applying the Non-Equilibrium Green Function (NEGF) method. NEGF approach has been used to describe nanoMOSFET devices based on Silicon nanowires.
doi_str_mv 10.1007/s10825-006-0138-y
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subjects Green's functions
Nanowires
Quantum confinement
Silicon dioxide
Transport properties
title Electronic and transport properties of silicon nanowires
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