Free-carrier grating due to the optical phonon emission in InP n + nn + structures

Electron transport in 5 μm long InP n+nn+ structure with the n-region doping of 1015cm−3 is theoretically investigated by the Monte Carlo Particle (MCP) technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the const...

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Bibliographic Details
Published in:Journal of computational electronics 2007-09, Vol.6 (1-3), p.11-14
Main Authors: Gružinskis, Viktoras, Starikov, Evgenij, Shiktorov, Pavel
Format: Article
Language:English
Subjects:
Electron transport
Emission
Indium phosphides
Phonons
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Summary:Electron transport in 5 μm long InP n+nn+ structure with the n-region doping of 1015cm−3 is theoretically investigated by the Monte Carlo Particle (MCP) technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating (FCG) can be formed inside the n-region. The simple model of FCG formation is proposed and verified by MCP simulation of electron transport and noise in the considered InP structure.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-006-0057-y