A novel high performance LDMOS transistor with high channel density

In this paper, we propose a novel high channel density LDMOS transistor (HCD-LDMOS) with low specific on-resistance and high transconductance. This is achieved primarily through increased channel density to improve transistor performance via the creation of a U-shaped structure. The channel density...

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Bibliographic Details
Published in:Journal of computational electronics 2018-03, Vol.17 (1), p.217-223
Main Authors: Pak, Amin, Orouji, Ali A.
Format: Article
Language:English
Subjects:
Density
Electric fields
Electrical Engineering
Electron energy
Engineering
Etching
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Optical and Electronic Materials
Reduction
Silicon
Simulation
Theoretical
Transconductance
Transistors
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Summary:In this paper, we propose a novel high channel density LDMOS transistor (HCD-LDMOS) with low specific on-resistance and high transconductance. This is achieved primarily through increased channel density to improve transistor performance via the creation of a U-shaped structure. The channel density is significantly increased when one extra etching process is added to create the U-shaped structure, resulting in a 68.42% reduction in specific on-resistance compared with a conventional structure (C-LDMOS). In addition, the gate control over the channel of the HCD-LDMOS is improved, and a marked increase in the peak transconductance value is achieved. Another key advantage is the lower electron temperature relative to the C-LDMOS. Using the U-shaped formation of the HCD-LDMOS structure, increases the uniformity of the electric field. This smoothing effect leads to a reduction in electron temperature and greater device reliability. The only difference between the C-LDMOS and the proposed structure is the addition of one extra etching process.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-017-1064-x