A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature

We propose a novel deep gate lateral double diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in partial silicon-on-insulator (PSOI) technology for achieving high breakdown voltage and reduced power dissipation. In the proposed device, an N + well is inserted in the buried oxide und...

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Bibliographic Details
Published in:Journal of computational electronics 2021-08, Vol.20 (4), p.1513-1519
Main Authors: Gavoshani, Amir, Orouji, Ali A.
Format: Article
Language:English
Subjects:
Breakdown
Electric fields
Electric potential
Electrical Engineering
Energy dissipation
Engineering
Field effect transistors
Integrated circuits
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Metal oxide semiconductors
Optical and Electronic Materials
Semiconductor devices
Silicon wafers
Theoretical
Transistors
Voltage
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Summary:We propose a novel deep gate lateral double diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in partial silicon-on-insulator (PSOI) technology for achieving high breakdown voltage and reduced power dissipation. In the proposed device, an N + well is inserted in the buried oxide under the drain region. By optimizing the N + well and the lateral distance between the buried oxide and the left side of the device, the electric field is modified. Therefore, the breakdown voltage improves. Also, the PSOI technology used in the proposed structure has a significant effect on reducing the lattice temperature. Our simulation results show that the proposed structure improves the breakdown voltage by about 67.5% and reduces the specific on-resistance by about 20% in comparison with a conventional LDMOS.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-021-01724-5