Threshold voltage modeling for a Gaussian-doped junctionless FinFET

This work presents two-dimensional (2D) analytical modeling of the threshold voltage of a double-gate junctionless FinFET with a Gaussian-doped channel by evaluating the 2D electrostatic potential distribution across the active area of the device. The influence of the fringing field lines through th...

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Bibliographic Details
Published in:Journal of computational electronics 2019-03, Vol.18 (1), p.83-90
Main Authors: Kaundal, Shalu, Rana, Ashwani K.
Format: Article
Language:English
Subjects:
Boundary conditions
CAD
Computer aided design
Design parameters
Electrical Engineering
Electrons
Engineering
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mathematical models
Mechanical Engineering
Modelling
Normal distribution
Optical and Electronic Materials
Silicon
Simulation
Theoretical
Threshold voltage
Two dimensional analysis
Two dimensional models
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Summary:This work presents two-dimensional (2D) analytical modeling of the threshold voltage of a double-gate junctionless FinFET with a Gaussian-doped channel by evaluating the 2D electrostatic potential distribution across the active area of the device. The influence of the fringing field lines through the spacer is also included in the modeling. To confirm the validity of the derived analytical model, technology computer-aided design (TCAD) device simulations were carried out. Furthermore, the impact of various design parameters on the threshold voltage was also studied.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-018-1285-7