An accurate compact model to extract the important physical parameters of an experimental nanoscale short-channel SOI MOSFET

• Published in: Journal of computational electronics 2019-03, Vol.18 (1), p.46-52
• Main Author: Anvarifard, Mohammad K.
• Format: Article
• Language: English
• Subjects: Algorithms; Carrier mobility; Electrical Engineering; Engineering; Field effect transistors; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mathematical models; Mechanical Engineering; Metal oxide semiconductors; MOSFETs; Optical and Electronic Materials; Optimization; Parameters; Particle swarm optimization; Performance evaluation; Physical properties; Search algorithms; Semiconductor devices; SOI (semiconductors); Theoretical; Threshold voltage; Transistors
• ISSN: 1569-8025; 1572-8137
• DOI: 10.1007/s10825-018-1267-9

A new compact model is introduced to determine the drain current of an experimental short-channel silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistor (MOSFET) analytically. The effective physical parameters of the experimental nanoscale SOI MOSFET were successfully extracted for the first time using an efficient search algorithm named particle swarm optimization (PSO) as a link between the analytical drain model and the experimental data. Seven important parameters, viz. the drain-induced barrier lowering, subthreshold swing, additional resistance at the source terminal, carrier velocity, low-field carrier mobility, and threshold voltage, were sought using the PSO algorithm to obtain the best fitness value. The results revealed that the application of this PSO strategy achieved an excellent match between the proposed drain current model and experimental data notwithstanding the initial values of the fitting parameters. Also, the internal node capacitances of the short-channel SOI MOSFET were successfully extracted for use in compact models of its small-signal operation.