DC performance analysis of III–V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon FET circuits with quantum mechanical effects

• Published in: Journal of computational electronics 2021-04, Vol.20 (2), p.855-863
• Main Authors: Dutta, Ritam, Subash, T. D., Paitya, Nitai
• Format: Article
• Language: English
• Subjects: Circuit design; Electric fields; Electrical Engineering; Electrons; Energy dissipation; Engineering; Field effect transistors; Graphene; Graphical representations; Heterostructures; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mathematical models; Mechanical Engineering; Nanoribbons; Optical and Electronic Materials; Process parameters; Quantum mechanics; Semiconductor devices; Simulation; Theoretical; Threshold voltage; Transistors; Tunnels
• ISSN: 1569-8025; 1572-8137
• DOI: 10.1007/s10825-020-01649-5

In this article, the electrical behavior of laterally grown novel short-channel III–V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon field effect transistor (DG-TM-PiN-TGNFET) has been studied based on their quantum mechanical effect (QME). Firstly, by varying the device process parameters of the novel TFET structure, the DC parameter responses viz. threshold voltage, electric field and surface potential are investigated. Further these responses are analyzed by considering the QME for better device performance. Two-dimensional numerical device simulator (SILVACO TCAD) tool is used for simulating the quantum and semi-classical models. The simulation work has been validated by extensive analytical modeling, that reflected in our accurate graphical representations. Finally, to investigate the QME effect in circuit level applications, an TFET inverter circuit has been designed and its DC performance viz. power dissipation and propagation delay analysis is performed.