Design and performance analysis of a low-pull-in-voltage RF MEMS shunt switch for millimeter-wave therapy, IoT, and 5G applications

Recent advancements in wireless communication systems utilize miniaturized devices based on microelectromechanical system technology for present and future 5G wireless applications. Nowadays, RF devices are utilizing frequencies up to 30 GHz with substantial signal propagation that leads to a slow d...

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Bibliographic Details
Published in:Journal of computational electronics 2022-04, Vol.21 (2), p.522-529
Main Authors: Ashok Kumar, P., Karumuri, Srinivasa Rao, Kondavitee, Girija Sravani, Guha, Koushik
Format: Article
Language:English
Subjects:
5G mobile communication
Design
Electric potential
Electrical Engineering
Engineering
Frequency ranges
Gold
Insertion loss
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Microelectromechanical systems
Millimeter waves
Optical and Electronic Materials
Radio frequency
Silicon wafers
Theoretical
Voltage
Wave spectra
Wireless communication systems
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Summary:Recent advancements in wireless communication systems utilize miniaturized devices based on microelectromechanical system technology for present and future 5G wireless applications. Nowadays, RF devices are utilizing frequencies up to 30 GHz with substantial signal propagation that leads to a slow data rate. On the other hand, there is a huge spectrum available in the millimeter-wave frequency range of 30–300 GHz. The millimeter-wave spectrum is attractive for the development of smart systems based on 5G technology. In this paper, a low-pull-in-voltage capacitive type RF MEMS switch is proposed to operate at frequencies above 30 GHz. The switch is proposed with a new iterative meandering technique where the span length of each section in the meanders differs relative to the first section. A low pull-in voltage of 1.8 V is achieved with a large capacitance ratio of 63. The switch exhibits low insertion loss of −0.24 dB at 41 GHz and possesses high isolation of −46.7 dB at 38 GHz. The design is validated by comparing the theoretical and simulated results, and the switch can be efficiently utilized for millimeter-wave applications.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-022-01863-3