Formation of Nano-Crystalline Phase in Hydrogenated Amorphous Silicon Thin Film by Plasma Focus Ion Beam Irradiation

• Published in: Journal of fusion energy 2012-02, Vol.31 (1), p.96-103
• Main Authors: Ngoi, S. K., Yap, S. L., Goh, B. T., Ritikos, R., Rahman, S. A., Wong, C. S.
• Format: Article
• Language: English
• Subjects: Amorphous silicon; Applied sciences; Argon ions; Chemical bonds; Chemical properties; Chemical vapor deposition; Controled nuclear fusion plants; Crystallinity; Dense plasmas; Dielectric films; Diffraction; Electrons; Emission analysis; Energy; Energy Systems; Energy. Thermal use of fuels; Exact sciences and technology; Field emission microscopy; Focus devices; Fourier transforms; Hydrogenation; Installations for energy generation and conversion: thermal and electrical energy; Investigations; Ion beams; Irradiation; Morphology; Neutrons; Nuclear Energy; Nuclear Fusion; Original Research; Phase transitions; Physics; Physics and Astronomy; Plasma; Plasma enhanced chemical vapor deposition; Plasma focus; Plasma Physics; Raman spectra; Sensors; Silicon; Silicon films; Silicon substrates; Spectrum analysis; Sustainable Development; Thin films; X-rays
• ISSN: 0164-0313; 1572-9591
• DOI: 10.1007/s10894-011-9435-y

A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated with the argon ion beam produced by this dense plasma focus device. The effects of exposure to a single, 5 and 10 shots of dense plasma focus argon ion beam irradiation on the surface morphology, crystallinity and chemical bonding properties of the a-Si:H films were studied using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD), Raman scattering and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Formation of nano-crystalline silicon phase along with increase in structural order and hydrogen content in the film structure has been observed when the a-Si:H film was irradiated with a single shot of dense plasma focus argon ion beam. Exposure to 5 and 10 shots of the dense plasma focus argon ion beam irradiation reduced the hydrogen content resulting in a decrease in crystallinity and structural order in the film structure.