Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy

AgCrS e 2 exhibits remarkably high ionic conduction, an inversion symmetry-breaking structural transition, and is host to complex non-colinear magnetic orders. Despite its attractive physical and chemical properties and its potential for technological applications, studies of this compound to date a...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2024-01, Vol.135 (4)
Main Authors: Nanao, Y., Bigi, C., Rajan, A., Vinai, G., Dagur, D., King, P. D. C.
Format: Article
Language:English
Subjects:
Broken symmetry
Chemical properties
Electronic structure
Epitaxial growth
Magnetic properties
Molecular beam epitaxy
Photoelectric emission
Single crystals
Stoichiometry
Thin films
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:AgCrS e 2 exhibits remarkably high ionic conduction, an inversion symmetry-breaking structural transition, and is host to complex non-colinear magnetic orders. Despite its attractive physical and chemical properties and its potential for technological applications, studies of this compound to date are focused almost exclusively on bulk samples. Here, we report the growth of AgCrSe2 thin films via molecular beam epitaxy. Single-orientated epitaxial growth was confirmed by x-ray diffraction, while resonant photoemission spectroscopy measurements indicate a consistent electronic structure as compared to bulk single crystals. We further demonstrate significant flexibility of the grain morphology and cation stoichiometry of this compound via control of the growth parameters, paving the way for the targeted engineering of the electronic and chemical properties of AgCrSe2 in thin-film form.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0184273