Enhancement of magnetoelectric coupling in laminate composites of textured Fe–Ga thin sheet and PZT

• Published in: AIP advances 2024-01, Vol.14 (1), p.015339-015339-6
• Main Authors: Liu, Jiande, He, Zhenghua, Mi, Chengdong, Sha, Yuhui, Zhu, Xiaofei, Hao, Hongbo, Chen, Lijia, Zuo, Liang
• Format: Article
• Language: English
• Subjects: Coupling coefficients; Electric potential; Electric power supplies; Grain orientation; Internet of Things; Laminates; Lead zirconate titanates; Magnetic fields; Magnetic resonance; Magnetostriction; Orientation effects; Piezoelectric ceramics; Polycrystals; Resonance; Sandwich structures; Secondary recrystallization; Voltage; Wireless sensor networks
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/9.0000683

Magneto-mechano-electric (MME) generators consisting of piezoelectric and magnetostrictive materials can convert the stray magnetic noise to useful electric energy for the wireless sensor networks utilizing the magnetoelectric coupling effect and magnetic interactions. In this paper, a scalable engineering approach was proposed to fabricate the laminate MME generator composed of a PZT/Fe–Ga/PZT sandwich structure. The Goss-oriented Fe81Ga19 thin sheet with a large magnetostriction of 244 ppm was produced by a simple and low-cost approach, and the commercial polycrystalline piezoelectric ceramic products (PZT-5H) were used as the PZT layers. The effect of grain orientation, device structure, magnetic field amplitude, and resonance frequency on the electrical output of the PZT/Fe–Ga/PZT MME generator was investigated. The electrical output of the MME generator containing the Goss-oriented Fe81Ga19 thin sheet reached an AC voltage of 4.58 V and the ME coefficient of 76.33 V/cm·Oe under a low excitation magnetic field of 26 Oe at a low resonance frequency of 26 Hz. The MME generator with a Goss-oriented Fe–Ga layer shows 4.7 times higher output voltage and ME coupling coefficient than that with the no-oriented polycrystalline Fe–Ga layer, but only 81% of the latter’s resonance frequency. This is related to the significant increase in magnetostriction due to the texture transition after secondary recrystallization annealing at the temperature of 950 °C. This paper provides a very promising solution to meet the self-power supply needs of the Internet of Things utilizing low-value and low-frequency magnetic fields.