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Promoting the optoelectronic and ferromagnetic properties of Cr2S3 nanosheets via Se doping

Doping can change the band structure of semiconductors, thereby affecting their electrical, optical, and magnetic properties. In this study, we describe the synthesis of two-dimensional (2D) Se-doped Cr 2 S 3 (Se-Cr 2 S 3 ) nanosheets using the chemical vapor deposition method. In these semiconducto...

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Published in:Science China. Physics, mechanics & astronomy mechanics & astronomy, 2022-07, Vol.65 (7), p.276811, Article 276811
Main Authors: Zhou, Xinyun, Liu, Chang, Song, Lingting, Zhang, Hongmei, Huang, Ziwei, He, Chenglin, Li, Bailing, Lin, Xiaohui, Zhang, Zucheng, Shi, Shun, Shen, Dingyi, Song, Rong, Li, Jia, Liu, Xingqiang, Zou, Xuming, Huang, Le, Liao, Lei, Duan, Xidong, Li, Bo
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Language:English
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Summary:Doping can change the band structure of semiconductors, thereby affecting their electrical, optical, and magnetic properties. In this study, we describe the synthesis of two-dimensional (2D) Se-doped Cr 2 S 3 (Se-Cr 2 S 3 ) nanosheets using the chemical vapor deposition method. In these semiconductor nanosheets, the Se doping concentration can be controlled by tuning the Se/S mass ratio in the precursor. At the doping concentrations of 10.05% and 2.05%, the room temperature conductivity and mobility were increased by nearly 4 and 2 orders of magnitude, respectively. In addition, the response time of an ultrathin Se-Cr 2 S 3 photo-detector was 200 times shorter than that of an undoped Cr 2 S 3 nanosheet photodetector. 4.07%-Se-Cr 2 S 3 nanosheets show ferrimagnetic behavior with a Curie temperature of ∼200 K, which is 80 K higher than that of undoped Cr 2 S 3 nanosheets. A density functional theory calculation indicated that the Se doping can induce the formation of intercalated Cr vacancies in Se-Cr 2 S 3 and enhance its metallic characteristics. Our results demonstrated that Se-Cr 2 S 3 has significant potential in future electronic, optoelectronic, and spintronic devices.
ISSN:1674-7348
1869-1927
DOI:10.1007/s11433-022-1914-2