Poly-Si films with low aluminum dopant containing by aluminum-induced crystallization

Typically, highly p-doped (2×10 18 cm −3 ) poly-Si films fabricated by the aluminum induced layer exchange (ALILE) process are not suitable for solar cell absorber layers. In this paper, the fabrication of high-quality, continuous polycrystalline silicon (poly-Si) films with lower doping concentrati...

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Bibliographic Details
Published in:Science China. Physics, mechanics & astronomy mechanics & astronomy, 2010, Vol.53 (1), p.111-115
Main Authors: Wang, ChengLong, Fan, DuoWang, Wang, ChengBin, Geng, ZhongRong, Ma, HaiLin, Miao, ShuFan
Format: Article
Language:English
Subjects:
Aluminum
Annealing
Astronomy
Classical and Continuum Physics
Crystallization
Dopants
Fabrication
Hall effect
Mass spectroscopy
Observations and Techniques
Photovoltaic cells
Physics
Physics and Astronomy
Polysilicon
Research Paper
Silicon films
Solar cells
Spectral analysis
Spectrum analysis
Temperature profiles
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Summary:Typically, highly p-doped (2×10 18 cm −3 ) poly-Si films fabricated by the aluminum induced layer exchange (ALILE) process are not suitable for solar cell absorber layers. In this paper, the fabrication of high-quality, continuous polycrystalline silicon (poly-Si) films with lower doping concentrations (2×10 16 cm −3 ) using aluminum-induced crystallization (AIC) is reported. Secondary-ion-mass spectroscopy (SIMS) results showed that annealing at different temperature profiles leads to a variety of Al concentrations. Hall Effect measurements revealed that Al dopant concentration depends on the annealing temperature and temperature profile. Raman spectral analysis indicated that samples prepared via AIC contain some regions with small grains.
ISSN:1674-7348
1869-1927
DOI:10.1007/s11433-010-0084-3