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Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices

Based on the integral method of single event upset(SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor(CMOS) devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figu...

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Bibliographic Details
Published in:Science China. Information sciences 2016-04, Vol.59 (4), p.52-62, Article 042402
Main Authors: He, Liang, Chen, Hua, Sun, Peng, Jia, Xiaofei, Dai, Chongguang, Liu, Jing, Shao, Long, Liu, Zhaoqing
Format: Article
Language:English
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Summary:Based on the integral method of single event upset(SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor(CMOS) devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figure of merit(FOM) methods are basically consistent at the ultra-deep submicron level. By proving the validity of the carrier collection model considering charge sharing, the applicability of two FOM methods is verified, and the trends of single-bit and multiple-bit upset rates for ultra-deep submicron CMOS are analyzed.
ISSN:1674-733X
1869-1919
DOI:10.1007/s11432-015-5362-2