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Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices
Based on the integral method of single event upset(SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor(CMOS) devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figu...
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Published in: | Science China. Information sciences 2016-04, Vol.59 (4), p.52-62, Article 042402 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Based on the integral method of single event upset(SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor(CMOS) devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figure of merit(FOM) methods are basically consistent at the ultra-deep submicron level. By proving the validity of the carrier collection model considering charge sharing, the applicability of two FOM methods is verified, and the trends of single-bit and multiple-bit upset rates for ultra-deep submicron CMOS are analyzed. |
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ISSN: | 1674-733X 1869-1919 |
DOI: | 10.1007/s11432-015-5362-2 |