A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

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Bibliographic Details
Published in:Science China. Information sciences 2023-05, Vol.66 (5), p.159402, Article 159402
Main Authors: Zhao, Yulin, Wang, Yuan, Zhang, Donglin, Han, Zhongze, Hu, Qiao, Liu, Xuanzhi, Ding, Qingting, Cheng, Jinhui, Zhang, Wenjun, Cao, Yue, Zhou, Ruixi, Luo, Qing, Yang, Jianguo, Lv, Hangbing
Format: Article
Language:English
Subjects:
Computer Science
Ferroelectricity
Information Systems and Communication Service
Letter
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ISSN:1674-733X
1869-1919
DOI:10.1007/s11432-021-3490-3