Loading…

Field-free switching through bulk spin — orbit torque in L10-FePt films deposited on vicinal substrates

L 1 0 -FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy (PMA), enabling thermally stabile memory cells to scale down to 3 nm. The recently discovered “bulk” spin-orbit torques in L 1 0 -FePt provide an efficient and scalable way to manipulate the L 1 0 -FePt magnetizatio...

Full description

Saved in:
Bibliographic Details
Published in:Frontiers of physics 2022-10, Vol.17 (5), p.53511, Article 53511
Main Authors: Luo, Yongming, Zhuang, Yanshan, Feng, Zhongshu, Fan, Haodong, Wu, Birui, Jin, Menghao, Shao, Ziji, Li, Hai, Bai, Ru, Wu, Yizheng, Wang, Ningning, Zhou, Tiejun
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:L 1 0 -FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy (PMA), enabling thermally stabile memory cells to scale down to 3 nm. The recently discovered “bulk” spin-orbit torques in L 1 0 -FePt provide an efficient and scalable way to manipulate the L 1 0 -FePt magnetization. However, the existence of an external field during the switching limits its practical application, and therefore field-free switching of L 1 0 -FePt is highly demanded. In this manuscript, by growing the L 1 0 -FePt film on vicinal MgO (001) substrates, we realize the field-free switching of L 1 0 -FePt. This method is different from previously established strategies as it does not need to add other functional layers or create asymmetry in the film structure. The dependence on the vicinal angle, film thickness, and growth temperature demonstrates a wide operation window for the field-free switching of L 1 0 -FePt. We confirm the physical origin of the field-free switching is due to the tilted anisotropy of L 1 0 -FePt induced by the vicinal surface. We also quantitatively characterize the spin-orbit torques in the L 1 0 -FePt films. Our results extend beyond the established strategies to realize field-free switching, and potentially could be applied to mass production.
ISSN:2095-0462
2095-0470
DOI:10.1007/s11467-022-1197-7