Moisture influence in emerging neuromorphic device

Conduction filament formation, redox reaction, and mobile ion migration in solid electrolytes underpin the memristive devices, all of which are partially influenced or fully dominated by the moisture. The moisture-based physical-chemistry mechanism provides an electric tunable method to create enoug...

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Bibliographic Details
Published in:Frontiers of physics 2023-10, Vol.18 (5), p.53601, Article 53601
Main Authors: Wang, Wenhua, Zhou, Guangdong
Format: Article
Language:English
Subjects:
Astronomy
Astrophysics and Cosmology
Atomic
Behavior
Chemical reactions
Condensed Matter Physics
Copyright
Electrolytes
Information storage
interface engineering
Interfaces
Ion migration
Memory devices
memristor
Moisture
Moisture effects
Molecular
Molten salt electrolytes
Neuromorphic computing
Optical and Plasma Physics
oxide
Particle and Nuclear Physics
Physics
Physics and Astronomy
Protons
redox reaction
Redox reactions
Solid electrolytes
View & Perspective
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Summary:Conduction filament formation, redox reaction, and mobile ion migration in solid electrolytes underpin the memristive devices, all of which are partially influenced or fully dominated by the moisture. The moisture-based physical-chemistry mechanism provides an electric tunable method to create enough dissociate conductance states for neuromorphic computing, but overconcentration moisture will corrode electrode and then causes device invalidation. This perspective goal is that surveys the moisture-dependency of dynamic at interfaces or/and switching function layer, clarifies the bottlenecks that the memristive device facing in terms of water molecule-related reaction, and gives the possible solutions.
ISSN:2095-0462
2095-0470
DOI:10.1007/s11467-023-1272-8