3D resistive RAM cell design for high-density storage class memory—a review

In this article, we comprehensively review recent progress in the Re RAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar Re RAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D...

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Bibliographic Details
Published in:Science China. Information sciences 2016-06, Vol.59 (6), p.31-51, Article 061403
Main Authors: Hudec, Boris, Hsu, Chung-Wei, Wang, I-Ting, Lai, Wei-Li, Chang, Che-Chia, Wang, Taifang, Fröhlich, Karol, Ho, Chia-Hua, Lin, Chen-Hsi, Hou, Tuo-Hung
Format: Article
Language:English
Subjects:
Computer Science
High density
Information Systems and Communication Service
RAM
Random access memory
Review
Titanium dioxide
三维一体化
交换机制
单元技术
单元设计
电阻
记忆
高密度存储
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Summary:In this article, we comprehensively review recent progress in the Re RAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar Re RAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked Re RAM vs 3D Vertical Re RAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on Hf O2-based filamentary 3D Vertical Re RAM as well as Ta Ox/Ti O2 bilayer-based self-rectifying 3D Vertical Re RAM. Finally,we summarize the present status and provide an outlook for the nearterm future.
ISSN:1674-733X
1869-1919
DOI:10.1007/s11432-016-5566-0