InAs/(In)GaSb-superconductor heterostructures: Materials and devices

This article will briefly describe a Majorana platform made of InAs/GaSb (including InAs/(In)GaSb) semiconductor-superconductor heterostructures. A unique advantage of this platform is that the quantum spin Hall edge state realized in inverted InAs/GaSb is a topologically protected spinless single m...

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Bibliographic Details
Published in:Science China. Physics, mechanics & astronomy mechanics & astronomy, 2023-06, Vol.66 (6), p.267006, Article 267006
Main Author: Du, Rui-Rui
Format: Article
Language:English
Subjects:
Astronomy
Classical and Continuum Physics
Electrons
Gallium antimonides
Heterostructures
Indium arsenides
Invited Review
Magnetic fields
Molecular beam epitaxy
Nanowires
Observations and Techniques
Physics
Physics and Astronomy
Quantum dots
Semiconductors
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Summary:This article will briefly describe a Majorana platform made of InAs/GaSb (including InAs/(In)GaSb) semiconductor-superconductor heterostructures. A unique advantage of this platform is that the quantum spin Hall edge state realized in inverted InAs/GaSb is a topologically protected spinless single mode, and can be tuned by front-back dual gates. Similar to a number of other platforms the proximity effect of a conventional s-wave superconductor on the helical edge has been proposed to realize Majorana bound state. We will present an introduction to this platform with a focus on the materials and devices aspects and those points that are particularly illustrative.
ISSN:1674-7348
1869-1927
DOI:10.1007/s11433-023-2125-4