Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for deta...

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Bibliographic Details
Published in:Frontiers of physics 2017-08, Vol.12 (4), p.173-185, Article 128502
Main Authors: Luo, Gang, Zhang, Zhuo-Zhi, Li, Hai-Ou, Song, Xiang-Xiang, Deng, Guang-Wei, Cao, Gang, Xiao, Ming, Guo, Guo-Ping
Format: Article
Language:English
Subjects:
Astronomy
Astrophysics and Cosmology
Atomic
Chalcogenides
Condensed Matter Physics
Crystals
Electron beams
Electron transport
Electronic properties
Energy gap
Fabrication
Field effect transistors
gate-defined quantum dot
Graphene
Heterostructures
Molecular
Nanostructure
Optical and Plasma Physics
Particle and Nuclear Physics
Physical properties
Physics
Physics and Astronomy
Quantum dots
Quantum phenomena
Recent Progress on Quantum Transport in Nano and Mesoscopic Systems
Review Article
Semiconductor devices
Semiconductors
Transition metal compounds
transition metal dichalcogenides (TMDCs)
Two dimensional materials
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Summary:Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.
ISSN:2095-0462
2095-0470
DOI:10.1007/s11467-017-0652-3