An experimental-numeric approach to manufacture semiconductor wafer using thick copper front metallization

The presented work investigates about the deformation of semiconductor device induced by electrochemical deposited thick copper films. It enhances thermal and electric performances allowing to use copper interconnections without formations of intermetallic layers at the interfaces with consequent re...

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Bibliographic Details
Published in:International journal on interactive design and manufacturing 2021-03, Vol.15 (1), p.117-119
Main Authors: Calabretta, Michele, Sitta, Alessandro, Oliveri, Salvatore Massimo, Sequenzia, Gaetano
Format: Article
Language:English
Subjects:
Annealing
CAE) and Design
Computer-Aided Engineering (CAD
Copper
Deformation
Design optimization
Electronics and Microelectronics
Engineering
Engineering Design
Finite element method
Grain growth
Industrial Design
Instrumentation
International conferences
Manufacturability
Manufacturing
Mechanical Engineering
Metal films
Metallizing
Reliability
Semiconductor devices
Short Original Paper
Thick films
Warpage
Workability
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Description
Summary:The presented work investigates about the deformation of semiconductor device induced by electrochemical deposited thick copper films. It enhances thermal and electric performances allowing to use copper interconnections without formations of intermetallic layers at the interfaces with consequent reliability improvement. Nevertheless, the induced deformation strongly affects manufacturability, criticizing the integration between different process steps. Experiment based on phase-shift Moiré principle has been performed to better understand the relation between warpage and temperature. Finite element model has been developed to reproduce the phenomenon in order to address the design and the process integration optimizing workability, electrical performances and reliability.
ISSN:1955-2513
1955-2505
DOI:10.1007/s12008-020-00736-y