Interplay of the influence of oxygen partial pressure and rf power on the properties of rf-magnetron-sputtered AZO thin films

The complex interplay between the influence of oxygen partial pressure and that of rf power on the structural, electrical and optical properties of rf-magnetron-sputtered aluminium-doped zinc oxide, AZO, thin films is illustrated. The dependence of film electrical resistance and interplanar spacing...

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Bibliographic Details
Published in:Bulletin of materials science 2017-08, Vol.40 (4), p.791-797
Main Authors: Kassis, A, Saad, M, Nounou, F
Format: Article
Language:English
Subjects:
Chemical properties
Chemistry and Materials Science
Crystallites
Energy
Engineering
Glass substrates
Influence
Ion bombardment
Low pressure
Magnetic properties
Materials Science
Optical properties
Oxygen ions
Partial pressure
Room temperature
Thin films
Zinc oxide
Zinc oxides
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Summary:The complex interplay between the influence of oxygen partial pressure and that of rf power on the structural, electrical and optical properties of rf-magnetron-sputtered aluminium-doped zinc oxide, AZO, thin films is illustrated. The dependence of film electrical resistance and interplanar spacing of film crystallites on rf power seems to be different at higher oxygen partial pressure values than at lower ones. Film preparation was performed at room temperature (without extra heating) and low pressure p = 0.5 mTorr, varying the rf power density between P = 0.57 and 2.83 W  cm - 2 at different relative oxygen partial pressure values. An explanation of film properties has been sought in terms of changes in the chemical properties of the films due to the bombardment of the films during film formation with negative oxygen ions.
ISSN:0250-4707
0973-7669
DOI:10.1007/s12034-017-1404-2