Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it

In this work an AlGaN/GaN HEMT device with thin (200 nm) buffer structure and moderate C-doping has been studied. DC characterization, Capacitance-Voltage (CV) measurements and RF measurements were carried out to investigate the effect of bulk traps on the device. Less vulnerability of this buffer s...

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Bibliographic Details
Published in:SILICON 2022-12, Vol.14 (18), p.12505-12512
Main Authors: Raychaudhuri, Jagori, Mukherjee, Jayjit, Bag, Rajesh, Malik, Amit, Kumar, Sudhir, Rawal, D. S., Mishra, Meena, Ghosh, Santanu
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Buffers
Chemistry
Chemistry and Materials Science
Environmental Chemistry
Gallium nitrides
Heat conductivity
High electron mobility transistors
Inorganic Chemistry
Lasers
Materials Science
Optical Devices
Optics
Original Paper
Photonics
Polymer Sciences
Simulation
Threshold voltage
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Summary:In this work an AlGaN/GaN HEMT device with thin (200 nm) buffer structure and moderate C-doping has been studied. DC characterization, Capacitance-Voltage (CV) measurements and RF measurements were carried out to investigate the effect of bulk traps on the device. Less vulnerability of this buffer structure towards trap was revealed by the observation of nominal kink in DC-IV and less current degradation (13% current slump) in Pulsed IV (PIV) characteristics. This is also confirmed by negligible threshold voltage (V T ) shift and hysteresis from CV measurement. A good isolation is observed from the low values of buffer leakage. Minimum noise figure (NF min ) is also calculated for this structure. Further, a Silvaco TCAD based simulation study is also performed considering the acceptor traps in buffer. From this, quite small drain lag is noticed which indicates that the effect of traps in buffer is less.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-022-01951-w