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Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3

This work highlights some physical properties of Sb 2 O 3 thin films obtained through heat treatment of Sb 2 S 3 thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb 2 O 3 t...

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Bibliographic Details
Published in:Bulletin of materials science 2016-12, Vol.39 (7), p.1801-1808
Main Authors: LAKHDAR, M HAJ, LARBI, T, KHALFALLAH, B, OUNI, B, AMLOUK, M
Format: Article
Language:English
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Summary:This work highlights some physical properties of Sb 2 O 3 thin films obtained through heat treatment of Sb 2 S 3 thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb 2 O 3 thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.
ISSN:0250-4707
0973-7669
DOI:10.1007/s12034-016-1335-3