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Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3
This work highlights some physical properties of Sb 2 O 3 thin films obtained through heat treatment of Sb 2 S 3 thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb 2 O 3 t...
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Published in: | Bulletin of materials science 2016-12, Vol.39 (7), p.1801-1808 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This work highlights some physical properties of Sb
2
O
3
thin films obtained through heat treatment of Sb
2
S
3
thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb
2
O
3
thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated. |
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ISSN: | 0250-4707 0973-7669 |
DOI: | 10.1007/s12034-016-1335-3 |