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Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3
This work highlights some physical properties of Sb 2 O 3 thin films obtained through heat treatment of Sb 2 S 3 thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb 2 O 3 t...
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| Published in: | Bulletin of materials science 2016-12, Vol.39 (7), p.1801-1808 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c289t-9ce87866845a6eb25d2a759f6886e89f38b9503c74862ce75ed3ba33565c887f3 |
| container_end_page | 1808 |
| container_issue | 7 |
| container_start_page | 1801 |
| container_title | Bulletin of materials science |
| container_volume | 39 |
| creator | LAKHDAR, M HAJ LARBI, T KHALFALLAH, B OUNI, B AMLOUK, M |
| description | This work highlights some physical properties of Sb
2
O
3
thin films obtained through heat treatment of Sb
2
S
3
thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb
2
O
3
thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated. |
| doi_str_mv | 10.1007/s12034-016-1335-3 |
| format | article |
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2
O
3
thin films obtained through heat treatment of Sb
2
S
3
thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb
2
O
3
thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.</description><identifier>ISSN: 0250-4707</identifier><identifier>EISSN: 0973-7669</identifier><identifier>DOI: 10.1007/s12034-016-1335-3</identifier><language>eng</language><publisher>Bangalore, India: Indian Academy of Sciences</publisher><subject>Antimony trioxide ; Chemistry and Materials Science ; Crystallization ; Dependence ; Dielectric properties ; Electrical resistivity ; Engineering ; Frequency ranges ; Glass substrates ; Grain size ; Heat treatment ; Impedance spectroscopy ; Materials Science ; Oxidation ; Physical properties ; Spectrum analysis ; Temperature ; Temperature dependence ; Thin films ; X-ray diffraction</subject><ispartof>Bulletin of materials science, 2016-12, Vol.39 (7), p.1801-1808</ispartof><rights>Indian Academy of Sciences 2016</rights><rights>Indian Academy of Sciences 2016.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c289t-9ce87866845a6eb25d2a759f6886e89f38b9503c74862ce75ed3ba33565c887f3</citedby><cites>FETCH-LOGICAL-c289t-9ce87866845a6eb25d2a759f6886e89f38b9503c74862ce75ed3ba33565c887f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>LAKHDAR, M HAJ</creatorcontrib><creatorcontrib>LARBI, T</creatorcontrib><creatorcontrib>KHALFALLAH, B</creatorcontrib><creatorcontrib>OUNI, B</creatorcontrib><creatorcontrib>AMLOUK, M</creatorcontrib><title>Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3</title><title>Bulletin of materials science</title><addtitle>Bull Mater Sci</addtitle><description>This work highlights some physical properties of Sb
2
O
3
thin films obtained through heat treatment of Sb
2
S
3
thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb
2
O
3
thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.</description><subject>Antimony trioxide</subject><subject>Chemistry and Materials Science</subject><subject>Crystallization</subject><subject>Dependence</subject><subject>Dielectric properties</subject><subject>Electrical resistivity</subject><subject>Engineering</subject><subject>Frequency ranges</subject><subject>Glass substrates</subject><subject>Grain size</subject><subject>Heat treatment</subject><subject>Impedance spectroscopy</subject><subject>Materials Science</subject><subject>Oxidation</subject><subject>Physical properties</subject><subject>Spectrum analysis</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Thin films</subject><subject>X-ray diffraction</subject><issn>0250-4707</issn><issn>0973-7669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEUhQdRsFZ_gLuAW6fmMXktpfgCoYvqOmSSjKZMJzXJiP33pkzBlat7uXznXM6pqmsEFwhCfpcQhqSpIWI1IoTW5KSaQclJzRmTp2XHFNYNh_y8ukhpAyGSTYNmVb_OcTR5jLq_Bda73pkcvQF6sEAvzAKYMNgC-G-f9yDl0e5B6MC6xSsC8qcfQOf7LQht1n5wFrT7cnVxq3sQfrzV2YfhKFiTy-qs031yV8c5r94fH96Wz_Xr6ullef9aGyxkrqVxggvGREM1cy2mFmtOZceEYE7IjohWUkgMbwTDxnHqLGl1Sc2oEYJ3ZF7dTL67GL5Gl7LahDEO5aXCsgSnFGNWKDRRJoaUouvULvqtjnuFoDqUqqZSVSlVHUpVpGjwpEmFHT5c_HP-X_QLJIJ4rQ</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>LAKHDAR, M HAJ</creator><creator>LARBI, T</creator><creator>KHALFALLAH, B</creator><creator>OUNI, B</creator><creator>AMLOUK, M</creator><general>Indian Academy of Sciences</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20161201</creationdate><title>Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3</title><author>LAKHDAR, M HAJ ; LARBI, T ; KHALFALLAH, B ; OUNI, B ; AMLOUK, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c289t-9ce87866845a6eb25d2a759f6886e89f38b9503c74862ce75ed3ba33565c887f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Antimony trioxide</topic><topic>Chemistry and Materials Science</topic><topic>Crystallization</topic><topic>Dependence</topic><topic>Dielectric properties</topic><topic>Electrical resistivity</topic><topic>Engineering</topic><topic>Frequency ranges</topic><topic>Glass substrates</topic><topic>Grain size</topic><topic>Heat treatment</topic><topic>Impedance spectroscopy</topic><topic>Materials Science</topic><topic>Oxidation</topic><topic>Physical properties</topic><topic>Spectrum analysis</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Thin films</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LAKHDAR, M HAJ</creatorcontrib><creatorcontrib>LARBI, T</creatorcontrib><creatorcontrib>KHALFALLAH, B</creatorcontrib><creatorcontrib>OUNI, B</creatorcontrib><creatorcontrib>AMLOUK, M</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Bulletin of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LAKHDAR, M HAJ</au><au>LARBI, T</au><au>KHALFALLAH, B</au><au>OUNI, B</au><au>AMLOUK, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3</atitle><jtitle>Bulletin of materials science</jtitle><stitle>Bull Mater Sci</stitle><date>2016-12-01</date><risdate>2016</risdate><volume>39</volume><issue>7</issue><spage>1801</spage><epage>1808</epage><pages>1801-1808</pages><issn>0250-4707</issn><eissn>0973-7669</eissn><abstract>This work highlights some physical properties of Sb
2
O
3
thin films obtained through heat treatment of Sb
2
S
3
thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb
2
O
3
thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.</abstract><cop>Bangalore, India</cop><pub>Indian Academy of Sciences</pub><doi>10.1007/s12034-016-1335-3</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0250-4707 |
| ispartof | Bulletin of materials science, 2016-12, Vol.39 (7), p.1801-1808 |
| issn | 0250-4707 0973-7669 |
| language | eng |
| recordid | cdi_proquest_journals_2919455226 |
| source | Indian Academy of Sciences; Springer Nature |
| subjects | Antimony trioxide Chemistry and Materials Science Crystallization Dependence Dielectric properties Electrical resistivity Engineering Frequency ranges Glass substrates Grain size Heat treatment Impedance spectroscopy Materials Science Oxidation Physical properties Spectrum analysis Temperature Temperature dependence Thin films X-ray diffraction |
| title | Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3 |
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