Impact of Temperature Variation on Analog, Hot-Carrier Injection and Linearity Parameters of Nanotube Junctionless Double-Gate-All-Around (NJL-DGAA) MOSFETs

Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design. However, the change in surrounding temperature affects its performances, such as hot carrier injection (HCI) degradation, Linearity distortion, and analog pe...

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Bibliographic Details
Published in:SILICON 2022-04, Vol.14 (6), p.2679-2686
Main Authors: Kumar, Nitish, Awasthi, Himanshi, Purwar, Vaibhav, Gupta, Abhinav, Dubey, Sarvesh
Format: Article
Language:English
Subjects:
Carrier injection
Chemistry
Chemistry and Materials Science
Current leakage
Distortion
Electric fields
Engineering
Environmental Chemistry
Inorganic Chemistry
Integrated circuits
Investigations
Lasers
Leakage current
Linearity
Materials Science
MOSFETs
Nanotubes
Optical Devices
Optics
Original Paper
Parameters
Performance degradation
Photonics
Polymer Sciences
Silicon
Simulation
Transconductance
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Summary:Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design. However, the change in surrounding temperature affects its performances, such as hot carrier injection (HCI) degradation, Linearity distortion, and analog performance, which are to be critically analyzed. In the present paper, the analog performance, HCI degradation, and Linearity distortion of NJL-DGAA MOSFETs are investigated on temperatures ranging from 200K to 500K using a Sentaurus 3D device simulator. The parameters such as ON-current, OFF-current, DIBL, subthreshold swing (SS), transconductance, gate leakage current, high-order gm, VIP2, VIP3, IIP3, IMD3, and 1-dB compression point have been evaluated for the mentioned temperature range. The ON-current and DIBL are found to be increased by 17.2 % and 27.5 %, respectively, when the temperature increases from 200K to 500K. However, assessment of performance reveals that the NJL-DGAA devices offer superior analog performance with high-frequency applications even at higher temperature ranges.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-021-01069-5