Study of Porous Silicon Prepared Using Metal-Induced Etching (MIE): a Comparison with Laser-Induced Etching (LIE)

Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore forma...

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Bibliographic Details
Published in:SILICON 2017-07, Vol.9 (4), p.483-488
Main Authors: Saxena, Shailendra K., Kumar, Vivek, Rai, Hari M., Sahu, Gayatri, Late, Ravikiran, Saxena, Kapil, Shukla, A. K., Sagdeo, Pankaj R., Kumar, Rajesh
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Environmental Chemistry
Etching
Field emission
Inorganic Chemistry
Lasers
Materials Science
Nanowires
Optical Devices
Optics
Original Paper
Photoluminescence
Photonics
Polymer Sciences
Pore formation
Pore size
Porous silicon
Quantum confinement
Room temperature
Silver
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Summary:Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prior to the porosification step. Whereas in p-Si, prepared by LIE technique, wider pores with some variation in pore size as compared to MIE technique is observed because a laser having gaussian profile of intensity is used for porosification. Uniformly distribute well-aligned Si nanowires are observed in samples prepared by MIE method as seen using cross-sectional SEM imaging. A single photoluminescence (PL) peak at 1.96 eV corresponding to red emission at room temperature is observed which reveals that the Si nanowires, present in p-Si prepared by MIE, show quantum confinement effect. The single PL peak confirms the presence of uniform sized nanowires in MIE samples. These vertically aligned Si nanowires can be used for field emission application.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-014-9242-y